The Zeiss Probe Station Microscope (PSM) is ideally suited to replace standard optical heads on a probe station for the most recent and most advanced techniques in failure analysis. In addition to having extremely high transmittance for photoemission imaging, the PSM extends the capabilities of the probe station for spectral analysis, backside emission, infrared imaging, UV fluorescence and liquid crystal. The PSM, with high optical efficiency and a wide spectral range is the best choice for today's demand for increased light sensitivity in photoemission imaging. The PSM has the ability to work in the near UV as well as the near IR.

Long working ICS optics increase dramatically the resolution required for submicron geometries giving improved image quality to probe stations.

UV fluorescence enables a new technique, Microthermography Fluorescence Imaging (MFI), being tested today to compliment emission imaging and liquid crystal for defect localization.

IR imaging enables backside emission imaging because Si and GaAs are transparent above 1100 nm. Backside emission imaging enables localization of defects where metal coverage obscures the view from the topside.

To further extend the probe station's capabilities the PSM can be configured for the following imaging modes: brightfield, darkfield, fluorescence, polarized light, interference contrast.

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